STGP10NB60S

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STGP10NB60S - Stmicroelectronics
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Краткое описание: 600V 10A IGBT Transistor TO-220
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

600V Insulated Gate Bipolar Transistor (IGBT) with a 10A continuous collector current and a maximum collector current of 29A. Features a low collector-emitter saturation voltage of 1.7V and a maximum power dissipation of 80W. Packaged in a TO-220 through-hole mount, this RoHS compliant component operates from -55°C to 150°C.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 9.15mm
Length 10.4mm
Series PowerMESH™
Weight 0.211644oz
Lead Free Lead Free
Packaging Rail/Tube
Input Type STANDARD
Package/Case TO-220
Current Rating 10A
RoHS Compliant Yes
DC Rated Voltage 600V
Package Quantity 50
Turn-On Delay Time 7us
Radiation Hardening No
Reach SVHC Compliant No
Max Collector Current 29A
Max Power Dissipation 80W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Continuous Collector Current 10A
Collector-emitter Voltage-Max 1.75V
Continuous Drain Current (ID) 10A
Drain to Source Voltage (Vdss) 600V
Collector Emitter Voltage (VCEO) 600V
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.7V

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