STGP10NC60HD

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STGP10NC60HD - Stmicroelectronics
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Краткое описание: 600V 7A IGBT TO-220 Through Hole Transistor
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

Insulated Gate Bipolar Transistor (IGBT) with 600V Collector-Emitter Breakdown Voltage and 600V Collector Emitter Voltage. Features a 1.9V Collector Emitter Saturation Voltage and 7A Continuous Collector Current, with a 20A Current Rating. This TO-220 packaged device offers a maximum power dissipation of 65W and operates within a temperature range of -55°C to 150°C. It includes a 22ns reverse recovery time and 14.2ns turn-on delay time.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 9.15mm
Length 10.4mm
Series PowerMESH™
Weight 0.012346oz
Lead Free Lead Free
Packaging Rail/Tube
Input Type STANDARD
Package/Case TO-220
Current Rating 20A
RoHS Compliant Yes
DC Rated Voltage 600V
Package Quantity 1000
Turn-On Delay Time 14.2ns
Radiation Hardening No
Turn-Off Delay Time 72ns
Max Collector Current 20A
Max Power Dissipation 65W
Reverse Recovery Time 22ns
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Continuous Collector Current 7A
Collector-emitter Voltage-Max 2.5V
Collector Emitter Voltage (VCEO) 600V
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.9V

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