STGP20V60DF
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Краткое описание:
IGBT 600V 40A TO-220
Дополнительная информация
The STGP20V60DF is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 600V and a maximum collector current of 40A. It is packaged in a TO-220 case and is designed for through-hole mounting. The transistor has a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It is RoHS compliant and has a power dissipation of 167W.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | STGP20V60DF |
| Packaging | Rail/Tube |
| Input Type | STANDARD |
| Package/Case | TO-220 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Power Dissipation | 167W |
| Radiation Hardening | No |
| Max Collector Current | 40A |
| Max Power Dissipation | 167W |
| Reverse Recovery Time | 40ns |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Collector-emitter Voltage-Max | 2.2V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.3V |
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