STGP7NC60H

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STGP7NC60H - Stmicroelectronics
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Краткое описание: 600V 25A N-Channel IGBT TO-220AB
Производитель Stmicroelectronics
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-Channel Insulated Gate Bipolar Transistor (IGBT) with a 600V Collector Emitter Breakdown Voltage and 25A Max Collector Current. Features a 2.5V Collector Emitter Saturation Voltage and 80W Power Dissipation. Designed for through-hole mounting in a TO-220-3 package. Operates from -55°C to 150°C and offers 18.5ns turn-on and 72ns turn-off delay times. RoHS compliant and lead-free.
RoHS Compliant
Mount Through Hole
Series PowerMESH™
Lead Free Lead Free
Packaging Rail/Tube
Input Type STANDARD
Package/Case TO-220-3
Current Rating 14A
RoHS Compliant Yes
DC Rated Voltage 600V
Package Quantity 1
Power Dissipation 80W
Turn-On Delay Time 18.5ns
Radiation Hardening No
Turn-Off Delay Time 72ns
Reach SVHC Compliant No
Max Breakdown Voltage 600V
Max Collector Current 25A
Max Power Dissipation 80W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Collector-emitter Voltage-Max 2.5V
Collector Emitter Voltage (VCEO) 600V
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.5V

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