STGW19NC60WD

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STGW19NC60WD - Stmicroelectronics
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Краткое описание: 600V 42A N-CH IGBT TO-247
Производитель Stmicroelectronics
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-Channel Insulated Gate Bipolar Transistor (IGBT) featuring a 600V collector-emitter breakdown voltage and a maximum collector current of 42A. This device offers a low collector-emitter saturation voltage of 2.5V and a maximum power dissipation of 125W. Packaged in a TO-247 through-hole mount, it operates across a temperature range of -55°C to 150°C. RoHS compliant with a reverse recovery time of 31ns and turn-on/off delay times of 25ns and 90ns respectively.
RoHS Compliant
Mount Through Hole
Width 5.15mm
Height 20.15mm
Length 15.75mm
Series PowerMESH™
Lead Free Lead Free
Packaging Rail/Tube
Input Type STANDARD
Package/Case TO-247
RoHS Compliant Yes
Package Quantity 30
Power Dissipation 125W
Turn-On Delay Time 25ns
Radiation Hardening No
Turn-Off Delay Time 90ns
Reach SVHC Compliant No
Max Collector Current 42A
Max Power Dissipation 125W
Reverse Recovery Time 31ns
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Collector-emitter Voltage-Max 2.5V
Collector Emitter Voltage (VCEO) 600V
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.5V

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