STGW20H60DF

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STGW20H60DF - Stmicroelectronics
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Краткое описание: IGBT 600V 40A TO-247
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

The STGW20H60DF is a 600V insulated gate bipolar transistor with a maximum collector current of 40A. It features a TO-247 package and is designed for through-hole mounting. The device operates within a temperature range of -55°C to 175°C and has a maximum power dissipation of 167W. The STGW20H60DF is compliant with RoHS regulations and is available in a rail/tube packaging configuration with 30 units per package.
RoHS Compliant
Mount Through Hole
Width 5.15mm
Height 20.15mm
Length 15.75mm
Packaging Rail/Tube
Input Type STANDARD
Package/Case TO-247
RoHS Compliant Yes
Package Quantity 30
Power Dissipation 167W
Radiation Hardening No
Max Collector Current 40A
Max Power Dissipation 167W
Reverse Recovery Time 90ns
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Collector-emitter Voltage-Max 2V
Collector Emitter Voltage (VCEO) 600V
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2V

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