STGW35NB60SD
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Краткое описание:
600V 70A IGBT Transistor TO-247
Дополнительная информация
Insulated Gate Bipolar Transistor (IGBT) featuring a 600V Collector Emitter Breakdown Voltage and 600V DC Rated Voltage. This through-hole component offers a continuous collector current of 70A and a current rating of 35A, with a maximum power dissipation of 200W. It operates within a temperature range of -55°C to 150°C and has a reverse recovery time of 44ns. The device is housed in a TO-247 package and is RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5.15mm |
| Height | 20.15mm |
| Length | 15.75mm |
| Series | PowerMESH™ |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Input Type | STANDARD |
| Package/Case | TO-247 |
| Current Rating | 35A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Package Quantity | 30 |
| Power Dissipation | 200W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Breakdown Voltage | 600V |
| Max Collector Current | 70A |
| Max Power Dissipation | 200W |
| Reverse Recovery Time | 44ns |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Collector-emitter Voltage-Max | 1.7V |
| Continuous Drain Current (ID) | 70A |
| Drain to Source Voltage (Vdss) | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.7V |
