STGW40H65FB
Производится
Увеличить
Краткое описание:
IGBT 650V 80A 283W TO-247-3 Through Hole
Дополнительная информация
The STGW40H65FB is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 650V and a maximum collector current of 80A. It has a maximum power dissipation of 283W and is packaged in a TO-247-3 case for through-hole mounting. The transistor operates over a temperature range of -55°C to 175°C and is compliant with RoHS regulations. It is available in a package quantity of 30 units per rail/tube packaging.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5.15mm |
| Height | 20.15mm |
| Length | 15.75mm |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Input Type | STANDARD |
| Package/Case | TO-247-3 |
| RoHS Compliant | Yes |
| Package Quantity | 30 |
| Power Dissipation | 283W |
| Radiation Hardening | No |
| Max Collector Current | 80A |
| Max Power Dissipation | 283W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Collector-emitter Voltage-Max | 2.3V |
| Collector Emitter Breakdown Voltage | 650V |
| Collector Emitter Saturation Voltage | 1.6V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
