STGW45HF60WD

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STGW45HF60WD - Stmicroelectronics
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Краткое описание: 600V 70A N-CH IGBT TO-247 Single Transistor
Производитель Stmicroelectronics
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel Insulated Gate Bipolar Transistor (IGBT) chip for through-hole mounting in a TO-247 package. Features a 600V collector-emitter voltage, 70A continuous collector current, and 250W maximum power dissipation. Offers a typical collector-emitter saturation voltage of 1.65V and operates across a temperature range of -55°C to 150°C. The 3-pin configuration includes a tab for enhanced thermal management.
PCB 3
Tab Tab
ECCN EAR99
PPAP No
Jedec TO-247
EU RoHS Yes with Exemption
Mounting Through Hole
Cage Code SCR76
Pin Count 3
Automotive No
Lead Shape Through Hole
Schedule B 8541290080
Channel Type N
Package/Case TO-247
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 5.45
Package Material Plastic
Basic Package Type Through Hole
Package Width (mm) 5.15(Max)
Package Description Transistor Outline Package
Package Family Name TO-247
Package Height (mm) 20.15(Max)
Package Length (mm) 15.75(Max)
Radiation Hardening No
Seated Plane Height (mm) 24.45(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 250000mW
Min Operating Temperature -55°C
Maximum Gate Emitter Voltage ±20V
Maximum Collector-Emitter Voltage 600V
Maximum Continuous Collector Current 70A
Typical Collector Emitter Saturation Voltage 1.65V

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