STGW45HF60WDI

Снят с производства
STGW45HF60WDI - Stmicroelectronics
Краткое описание: 600V 70A N-CH IGBT Transistor TO-247
Производитель Stmicroelectronics
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel IGBT transistor, 600V collector-emitter voltage, 70A continuous collector current, and 250W power dissipation. Features a TO-247 package with 3 pins and a tab, designed for through-hole mounting. Operating temperature range from -55°C to 150°C.
PCB 3
Tab Tab
ECCN EAR99
PPAP No
Jedec TO-247
EU RoHS Yes with Exemption
Mounting Through Hole
Cage Code SCR76
Pin Count 3
Automotive No
Lead Shape Through Hole
Schedule B 8541290080
Channel Type N
Package/Case TO-247
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 5.45
Package Material Plastic
Basic Package Type Through Hole
Package Width (mm) 5.15(Max)
Package Description Transistor Outline Package
Package Family Name TO-247
Package Height (mm) 20.15(Max)
Package Length (mm) 15.75(Max)
Radiation Hardening No
Seated Plane Height (mm) 24.45(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 250000mW
Min Operating Temperature -55°C
Maximum Gate Emitter Voltage ±20V
Maximum Collector-Emitter Voltage 600V
Maximum Continuous Collector Current 70A
Typical Collector Emitter Saturation Voltage 1.9V

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