STGW60H65FB

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STGW60H65FB - Stmicroelectronics
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Краткое описание: 650V 80A TO-247 IGBT Transistor
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

The STGW60H65FB is a 650V insulated gate bipolar transistor with a maximum collector current of 80A. It features a TO-247-3 package and is designed for through-hole mounting. The device has a maximum power dissipation of 375W and operates within a temperature range of -40°C to 175°C. The STGW60H65FB is lead-free and RoHS compliant.
RoHS Compliant
Mount Through Hole
Width 5.15mm
Height 20.15mm
Length 15.75mm
Lead Free Lead Free
Packaging Rail/Tube
Input Type STANDARD
Package/Case TO-247-3
RoHS Compliant Yes
Package Quantity 30
Power Dissipation 375W
Radiation Hardening No
Max Collector Current 80A
Max Power Dissipation 375W
Max Operating Temperature 175°C
Min Operating Temperature -40°C
Collector-emitter Voltage-Max 2.3V
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 1.6V

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