STGW60V60F

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STGW60V60F - Stmicroelectronics
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Краткое описание: 600V 80A TO-247 Insulated Gate Bipolar Transistor
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

The STGW60V60F is a 600V insulated gate bipolar transistor (IGBT) with a maximum collector current of 80A. It features a TO-247 package and is designed for through-hole mounting. The device has a maximum power dissipation of 375W and operates within a temperature range of -55°C to 175°C. The STGW60V60F is compliant with RoHS regulations and is available in a rail/Tube packaging with 30 units per package.
RoHS Compliant
Mount Through Hole
Width 5.15mm
Height 20.15mm
Length 15.75mm
Series STGW60V60F
Lead Free Lead Free
Packaging Rail/Tube
Input Type STANDARD
Package/Case TO-247
RoHS Compliant Yes
Package Quantity 30
Power Dissipation 375W
Turn-On Delay Time 60ns
Radiation Hardening No
Turn-Off Delay Time 208ns
Max Collector Current 80A
Max Power Dissipation 375W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Collector-emitter Voltage-Max 2.3V
Collector Emitter Voltage (VCEO) 600V
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.35V

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