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Краткое описание:
N-Ch 60V 4A 100mR Power MOSFET SOT-223
Дополнительная информация
N-channel power MOSFET featuring 60V drain-source breakdown voltage and 4A continuous drain current. Surface mountable in a SOT-223 package, this component offers a low 0.07 Ohm typical drain-source resistance. Key specifications include a 16V gate-source voltage, 3.3W maximum power dissipation, and operating temperatures from -55°C to 150°C. RoHS compliant with fast switching times, including 9ns turn-on delay and 10ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.5mm |
| Height | 1.8mm |
| Length | 6.5mm |
| Series | STripFET™ II |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 100mR |
| Package/Case | SOT-223 |
| Current Rating | 4A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 4000 |
| Input Capacitance | 340pF |
| Power Dissipation | 3.3W |
| Threshold Voltage | 2.8V |
| Number of Elements | 1 |
| Turn-On Delay Time | 9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 3.3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 100mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain to Source Breakdown Voltage | 60V |
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