STP40N60M2

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STP40N60M2 - Stmicroelectronics
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Краткое описание: 600V 34A N-CH MOSFET TO-220 88mR
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel power MOSFET featuring 600V drain-source voltage and 34A continuous drain current. This through-hole component offers a low 0.078 Ohm typical drain-source resistance and a maximum power dissipation of 250W. Operating across a wide temperature range from -55°C to 150°C, it is housed in a TO-220 package. Key switching characteristics include a 20.5ns turn-on delay and an 11ns fall time.
RoHS Compliant
Mount Through Hole
Series MDmesh™ II Plus
Weight 0.01164oz
Polarity N-CHANNEL
Fall Time 11ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 88mR
Package/Case TO-220-3
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 2.5nF
Number of Channels 1
Turn-On Delay Time 20.5ns
Radiation Hardening No
Turn-Off Delay Time 96ns
Max Power Dissipation 250W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 88mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 34A
Drain to Source Voltage (Vdss) 600V
Drain to Source Breakdown Voltage 650V

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