STP62NS04Z
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Краткое описание:
N-CH MOSFET, 33V, 62A, 15mR, TO-220
Дополнительная информация
N-channel MOSFET featuring 33V drain-source breakdown voltage and 15mΩ maximum drain-source on-resistance. This fully protected component offers a continuous drain current of 62A and a maximum power dissipation of 110W. Designed for through-hole mounting in a TO-220 package, it operates across a wide temperature range from -55°C to 175°C. Key switching characteristics include a 13ns turn-on delay and a 42ns fall time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 15.75mm |
| Length | 10.4mm |
| Series | MESH OVERLAY™ |
| Polarity | N-CHANNEL |
| Fall Time | 42ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 15mR |
| Package/Case | TO-220 |
| Current Rating | 62A |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 1.33nF |
| Power Dissipation | 110W |
| Threshold Voltage | 4V |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 41ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 110W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 15mR |
| Gate to Source Voltage (Vgs) | 18V |
| Continuous Drain Current (ID) | 62A |
| Drain to Source Voltage (Vdss) | 33V |
| Drain-source On Resistance-Max | 15MR |
| Drain to Source Breakdown Voltage | 33V |
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