STP6N60M2
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Краткое описание:
600V N-CH MOSFET, 4.5A, 1.2R Rds(on), TO-220
Дополнительная информация
N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 4.5A continuous drain current. Offers a low 1.06 Ohm typical drain-source on-resistance, with a maximum of 1.2 Ohm. Designed for through-hole mounting in a TO-220 package, this component operates within a -55°C to 150°C temperature range and has a maximum power dissipation of 60W. Key switching characteristics include a 9.5ns turn-on delay and 22.5ns fall time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 15.75mm |
| Length | 10.4mm |
| Series | MDmesh™ II Plus |
| Polarity | N-CHANNEL |
| Fall Time | 22.5ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 1.2R |
| Package/Case | TO-220 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 232pF |
| Power Dissipation | 60W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 9.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 24ns |
| Max Power Dissipation | 60W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.06R |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 1.2R |
| Drain to Source Breakdown Voltage | 600V |
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