STP75NF75

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STP75NF75 - Stmicroelectronics
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Краткое описание: 75V N-CH MOSFET, 80A, 9.5mR RdsOn, TO-220
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel power MOSFET featuring 75V drain-source breakdown voltage and 80A continuous drain current. This STripFET™ II device offers a low 9.5mΩ typical drain-source on-resistance and 11mΩ maximum. Housed in a TO-220 package for through-hole mounting, it supports a maximum power dissipation of 300W and operates from -55°C to 175°C. Key switching characteristics include a 25ns turn-on delay and 30ns fall time.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 9.15mm
Length 10.4mm
Series STripFET™ II
Polarity N-CHANNEL
Fall Time 30ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 11mR
Package/Case TO-220
Current Rating 80A
RoHS Compliant Yes
DC Rated Voltage 75V
Package Quantity 1000
Input Capacitance 3.7nF
Power Dissipation 300W
Threshold Voltage 3V
Number of Elements 1
Turn-On Delay Time 25ns
Radiation Hardening No
Turn-Off Delay Time 66ns
Reach SVHC Compliant No
Max Power Dissipation 300W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 9.5mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 80A
Drain to Source Voltage (Vdss) 75V
Drain-source On Resistance-Max 11mR
Drain to Source Breakdown Voltage 75V

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