STP9NK50ZFP
Производится
Увеличить
Краткое описание:
500V 7.2A N-CH MOSFET TO-220FP, 850mR RdsOn
Дополнительная информация
N-channel SuperMESH™ Power MOSFET, 500V Drain to Source Breakdown Voltage, 7.2A Continuous Drain Current, and 850mΩ Max Drain-Source On Resistance. Features a TO-220FP package for through-hole mounting, 30W Power Dissipation, and operating temperatures from -55°C to 150°C. Includes fast switching characteristics with 17ns Turn-On Delay Time and 22ns Fall Time. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 9.3mm |
| Length | 10.4mm |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 22ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 850mR |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Input Capacitance | 910pF |
| Power Dissipation | 30W |
| Threshold Voltage | 3.75V |
| Number of Elements | 1 |
| Turn-On Delay Time | 17ns |
| Turn-Off Delay Time | 45ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 30W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 850mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 7.2A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 850MR |
| Drain to Source Breakdown Voltage | 500V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
