STW20NM60FD

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STW20NM60FD - Stmicroelectronics
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Краткое описание: 600V 20A N-CH TO-247 Power MOSFET
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 20A continuous drain current. This component offers a low 290mΩ maximum drain-source on-resistance and a 4V threshold voltage. Designed for through-hole mounting in a TO-247 package, it boasts a maximum power dissipation of 214W and operates within a temperature range of -65°C to 150°C. Key switching characteristics include a 25ns turn-on delay and a 22ns fall time.
RoHS Compliant
Mount Through Hole
Width 5.15mm
Height 20.15mm
Length 15.75mm
Series FDmesh™
Polarity N-CHANNEL
Fall Time 22ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 290mR
Package/Case TO-247
Current Rating 20A
RoHS Compliant Yes
DC Rated Voltage 600V
Package Quantity 30
Input Capacitance 1.3nF
Power Dissipation 214W
Threshold Voltage 4V
Number of Elements 1
Turn-On Delay Time 25ns
Radiation Hardening No
Reach SVHC Compliant No
Max Power Dissipation 214W
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Drain to Source Resistance 290mR
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 20A
Drain to Source Voltage (Vdss) 600V
Drain-source On Resistance-Max 290mR
Drain to Source Breakdown Voltage 600V

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