STW24N60M2

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STW24N60M2 - Stmicroelectronics
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Краткое описание: 600V 18A N-CH MOSFET TO-247 190mR Rds(on)
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel power MOSFET featuring 600V drain-source breakdown voltage and 18A continuous drain current. Offers a low 190mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-247 package, this component boasts a 150W power dissipation and operates within a -55°C to 150°C temperature range. Includes fast switching characteristics with turn-on and turn-off delay times of 14ns.
RoHS Compliant
Mount Through Hole
Width 5.15mm
Height 20.15mm
Length 15.75mm
Series MDmesh™ II Plus
Polarity N-CHANNEL
Fall Time 61ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 190mR
Package/Case TO-247
RoHS Compliant Yes
Input Capacitance 1.06nF
Power Dissipation 150W
Number of Elements 1
Turn-On Delay Time 14ns
Radiation Hardening No
Turn-Off Delay Time 14ns
Max Power Dissipation 150W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 190mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 18A
Drain to Source Voltage (Vdss) 600V
Drain-source On Resistance-Max 190MR
Drain to Source Breakdown Voltage 600V

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