STW45NM60

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STW45NM60 - Stmicroelectronics
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Краткое описание: 600V 45A N-CH MOSFET TO-247 110mR Power
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-CHANNEL Power MOSFET featuring 650V Drain to Source Voltage (Vdss) and 45A Continuous Drain Current (ID). Offers a low 110mR Drain-source On Resistance (Rds On Max) and 417W Max Power Dissipation. This through-hole TO-247 packaged MOSFET boasts a 3.8nF input capacitance and fast switching times with a 30ns turn-on delay and 23ns fall time. RoHS compliant and operating from -65°C to 150°C.
RoHS Compliant
Mount Through Hole
Width 5.15mm
Height 20.15mm
Length 15.75mm
Series MDmesh™
Polarity N-CHANNEL
Fall Time 23ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 110mR
Package/Case TO-247
Current Rating 45A
RoHS Compliant Yes
DC Rated Voltage 600V
Package Quantity 30
Input Capacitance 3.8nF
Power Dissipation 417W
Threshold Voltage 4V
Number of Elements 1
Turn-On Delay Time 30ns
Radiation Hardening No
Reach SVHC Compliant No
Max Power Dissipation 417W
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Drain to Source Resistance 110mR
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 45A
Drain to Source Voltage (Vdss) 650V
Drain-source On Resistance-Max 110mR
Drain to Source Breakdown Voltage 600V

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