TEKT5400S
Производится
Увеличить
Краткое описание:
NPN Phototransistor, 920nm IR, 70V VCEO, 100mA IC, Radial
Дополнительная информация
NPN phototransistor with a 920nm wavelength, featuring a 70V collector-emitter breakdown voltage and 100mA maximum collector current. This silicon chip offers a 300mV collector-emitter saturation voltage and a 8µs fall time. Housed in a radial, through-hole mount package with a domed lens, it operates within a -40°C to 85°C temperature range and has a 150mW power dissipation.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.65mm |
| Height | 5mm |
| Length | 5mm |
| Polarity | NPN |
| Fall Time | 8us |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Lens Style | Domed |
| Wavelength | 920nm |
| Orientation | Side View |
| Package/Case | Radial |
| Viewing Angle | 74° |
| RoHS Compliant | Yes |
| Package Quantity | 2000 |
| Power Consumption | 150mW |
| Power Dissipation | 150mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| Max Breakdown Voltage | 70V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 150mW |
| Operating Supply Voltage | 5V |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 70V |
| Collector Emitter Voltage (VCEO) | 70V |
| Collector Emitter Breakdown Voltage | 70V |
| Collector Emitter Saturation Voltage | 300mV |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
