TIP31A
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Краткое описание:
NPN BJT TO-220 Power Transistor 60V 3A
Дополнительная информация
NPN bipolar junction transistor (BJT) in a TO-220 package, designed for complementary silicon power applications. Features a maximum collector current of 3A and a collector-emitter breakdown voltage of 60V. Offers a maximum collector-emitter saturation voltage of 1.2V and a minimum hFE of 10. Operates within a temperature range of -65°C to 150°C with a power dissipation of 2W. Through-hole mounting and RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 9.15mm |
| Length | 10.4mm |
| hFE Min | 10 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Package/Case | TO-220 |
| Current Rating | 3A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 50 |
| Power Dissipation | 2W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Collector Current | 3A |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 60V |
| Collector-emitter Voltage-Max | 1.2V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 1.2V |
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