UMZ1N-TP
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Краткое описание:
Dual NPN/PNP BJT Transistor, 50V, 0.15A, SOT-363
Дополнительная информация
Dual NPN/PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 6-pin SOT-363 package with a maximum collector-emitter voltage of 50V and a maximum collector current of 0.15A. Offers a minimum DC current gain of 120 at 1mA/6V and a maximum transition frequency of 180MHz for NPN and 140MHz for PNP. Operates within a temperature range of -55°C to 150°C.
| PCB | 6 |
| ECCN | EAR99 |
| PPAP | No |
| Type | NPN|PNP |
| EU RoHS | Yes |
| Category | Bipolar Power |
| HTS Code | 8541210075 |
| Mounting | Surface Mount |
| Cage Code | 374W0 |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541210080 |
| Package/Case | SOT-363 |
| AEC Qualified | No |
| Configuration | Dual |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 1.35(Max) |
| Package Description | Small Outline Transistor |
| Package Family Name | SOT |
| Package Height (mm) | 1(Max) |
| Package Length (mm) | 2.2(Max) |
| Radiation Hardening | No |
| Minimum DC Current Gain | 120@1mA@6V |
| Seated Plane Height (mm) | 1.1(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 150mW |
| Min Operating Temperature | -55°C |
| Number of Elements per Chip | 2 |
| Maximum DC Collector Current | 0.15A |
| Maximum Emitter Base Voltage | 7@NPN|6@PNPV |
| Maximum Transition Frequency | 180(Typ)@NPN|140(Typ)@PNPMHz |
| Maximum Collector Base Voltage | 60V |
| Maximum Collector-Emitter Voltage | 50V |
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