US5U30TR
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P-Channel JFET, 20V, 1A ID, 390mR Rds On, SMD
Дополнительная информация
P-channel Silicon Junction Field-Effect Transistor (JFET) for small signal applications. Features a continuous drain current of 1A and a drain-to-source breakdown voltage of -20V. Offers a low on-resistance of 390mR and a maximum power dissipation of 1W. Packaged in a compact 5-pin TUMT5 surface-mount (SMD/SMT) configuration, suitable for tape and reel packaging. Operates across a wide temperature range from -55°C to 150°C, with fast switching speeds including a 9ns turn-on delay and 10ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.6mm |
| Height | 0.85mm |
| Length | 2.9mm |
| Polarity | P-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 390mR |
| Package/Case | SMD/SMT |
| Current Rating | -1A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -20V |
| Package Quantity | 1 |
| Input Capacitance | 150pF |
| Power Dissipation | 1W |
| Turn-On Delay Time | 9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 25ns |
| Max Power Dissipation | 1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 390mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 1A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain to Source Breakdown Voltage | -20V |
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