VS-GB50YF120N
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Краткое описание:
IGBT 1.2kV 66A 330W Chassis Mount Module
Дополнительная информация
The VS-GB50YF120N is a 1.2kV insulated gate bipolar transistor (IGBT) with a maximum collector current of 66A and a maximum power dissipation of 330W. It is packaged in a module format for chassis mount applications. The transistor has a maximum operating temperature of 150°C and is available in a bulk packaging configuration with 12 units per package. The VS-GB50YF120N is a NPN polarity transistor with a standard input type.
| RoHS | Compliant |
| Input | Standard |
| Mount | Chassis Mount |
| Width | 45.4mm |
| Height | 13.2mm |
| Length | 107.8mm |
| Weight | 6oz |
| Polarity | NPN |
| Packaging | Bulk |
| Package/Case | Module |
| NTC Thermistor | No |
| Package Quantity | 12 |
| Reach SVHC Compliant | Unknown |
| Max Collector Current | 66A |
| Max Power Dissipation | 330W |
| Max Operating Temperature | 150°C |
| Collector-emitter Voltage-Max | 4.5V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 4.15V |
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