ZTX658

Снят с производства
ZTX658 - Diodes
Увеличить
Краткое описание: NPN BJT Transistor, 400V VCEO, 500mA IC, 50MHz, TO-92
Производитель Diodes
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 400V Collector Emitter Breakdown Voltage (VCEO) and 400V Collector Base Voltage (VCBO). Offers a continuous collector current rating of 500mA and a transition frequency of 50MHz. Packaged in a TO-92 compatible E-LINE package with through-hole mounting. Operates across a temperature range of -55°C to 200°C with a maximum power dissipation of 1W. RoHS compliant and lead-free.
RoHS Compliant
Mount Through Hole
Width 2.41mm
Height 4.01mm
Length 4.77mm
Weight 0.016oz
Polarity NPN
Frequency 50MHz
Lead Free Lead Free
Packaging Bulk
Package/Case TO-92
Current Rating 500mA
RoHS Compliant Yes
DC Rated Voltage 400V
Package Quantity 4000
Power Dissipation 1W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 50MHz
Max Collector Current 500mA
Max Power Dissipation 1W
Gain Bandwidth Product 50MHz
Max Operating Temperature 200°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 500mA
Collector Base Voltage (VCBO) 400V
Collector-emitter Voltage-Max 500mV
Collector Emitter Voltage (VCEO) 400V
Collector Emitter Breakdown Voltage 400V
Collector Emitter Saturation Voltage 500mV

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.