ZXMN2B01FTA
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Краткое описание:
N-Channel JFET, 20V, 2.4A ID, 100mR Rds On, SOT-23
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor FET, SOT-23 package. Features 20V Drain-Source Voltage (Vdss) and 2.4A Continuous Drain Current (ID). Offers low 100mR Drain-to-Source On Resistance (Rds On Max). Operates from -55°C to 150°C with a maximum power dissipation of 806mW. Includes fast switching characteristics with 2.2ns turn-on delay and 3.6ns fall time. Surface mountable with tape and reel packaging.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Weight | 0.000282oz |
| Polarity | N-CHANNEL |
| Fall Time | 3.6ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 100mR |
| Package/Case | SOT-23-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 370pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 2.2ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 17.8ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 806mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 100mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 2.4A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 100mR |
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