ZXTP2012ASTOA
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PNP BJT Transistor, 60V, 3.5A, 120MHz, TO-226-3
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 60V Collector-Emitter Breakdown Voltage and a continuous collector current rating of 3.5A. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 120MHz. Packaged in a TO-226-3 (E-LINE) 3-pin through-hole configuration. Operates across a wide temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.41mm |
| Height | 4.01mm |
| Length | 4.77mm |
| hFE Min | 100 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | TO-226-3 |
| Max Frequency | 120MHz |
| Current Rating | -3.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Package Quantity | 2000 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 120MHz |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 3.5A |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 120MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Collector Base Voltage (VCBO) | 100V |
| Collector-emitter Voltage-Max | 210mV |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -210mV |
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