EM6K6T2R
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Краткое описание:
2 N-Channel JFET, 20V, 300mA, 1R, 150°C, Surface Mount
Дополнительная информация
The EM6K6T2R is a 2 N-Channel JFET with a drain to source breakdown voltage of 20V and a continuous drain current of 300mA. It has a drain to source resistance of 1R and a maximum operating temperature of 150°C. This device is surface mount and RoHS compliant. The EM6K6T2R has a maximum power dissipation of 150mW and a turn-on delay time of 5ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1R |
| RoHS Compliant | Yes |
| Package Quantity | 8000 |
| Input Capacitance | 25pF |
| Power Dissipation | 150mW |
| Number of Elements | 2 |
| Turn-On Delay Time | 5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15ns |
| Max Power Dissipation | 150mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1R |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 300mA |
| Drain to Source Voltage (Vdss) | 20V |
| Drain to Source Breakdown Voltage | 20V |
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