FC6943010R
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Краткое описание:
N-Channel JFET, 30V, 100mA, 8Ω Rds(on), SOT-666
Дополнительная информация
N-Channel Silicon JFET for small signal applications. Features 30V drain-to-source voltage (Vdss) and 100mA continuous drain current (ID). Operates with a gate-to-source voltage (Vgs) up to 12V and a nominal Vgs of 1V. Offers a low drain-to-source resistance of 3 Ohms. Packaged in a compact SOT-666 surface mount package, measuring 1.6mm x 1.2mm x 0.5mm. This component is HALOGEN FREE and ROHS COMPLIANT, with a maximum power dissipation of 125mW.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.2mm |
| Height | 0.5mm |
| Length | 1.6mm |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Packaging | Tape and Reel |
| Rds On Max | 8R |
| Nominal Vgs | 1V |
| Package/Case | SOT-666 |
| RoHS Compliant | Yes |
| Package Quantity | 8000 |
| Input Capacitance | 12pF |
| Threshold Voltage | 1V |
| Turn-On Delay Time | 100ns |
| Turn-Off Delay Time | 100ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 125mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3R |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 100mA |
| Drain to Source Voltage (Vdss) | 30V |
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