FDT86246
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Краткое описание:
N-Channel JFET 150V 2A 236mR SOT-223 Surface Mount
Дополнительная информация
N-Channel Power Trench® MOSFET, single element configuration, offers 150V drain-to-source breakdown voltage and 2A continuous drain current. Features a low 236mΩ drain-to-source resistance and 2.2W maximum power dissipation. Designed for surface mount applications in a SOT-223 package, this RoHS compliant component boasts fast switching speeds with a 1.2ns fall time. Operating temperature range spans from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.7mm |
| Height | 1.7mm |
| Length | 3.7mm |
| Series | PowerTrench® |
| Weight | 0.2502g |
| Polarity | N-CHANNEL |
| Fall Time | 1.2ns |
| Packaging | Tape and Reel |
| Rds On Max | 236mR |
| Nominal Vgs | 3.1V |
| Package/Case | SOT-223 |
| RoHS Compliant | Yes |
| Package Quantity | 4000 |
| Input Capacitance | 215pF |
| Power Dissipation | 2.2W |
| Threshold Voltage | 3.1V |
| Turn-On Delay Time | 7.8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 4.6ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 2.2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 236mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Voltage (Vdss) | 150V |
| Drain to Source Breakdown Voltage | 150V |
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